NTD3055L104,
NTDV3055L104
Power MOSFET
12 Amps, 60 Volts, Logic Level
N ? Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
Features
? Lower R DS(on)
? Lower V DS(on)
? Tighter V SD Specification
? Lower Diode Reverse Recovery Time
? Lower Reverse Recovery Stored Charge
? AEC Q101 Qualified ? NTDV3055L104
? These Devices are Pb ? Free and are RoHS Compliant
Typical Applications
? Power Supplies
? Converters
? Power Motor Controls
? Bridge Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
60 V
G
R DS(on) TYP
104 m W
N ? Channel
D
S
I D MAX
12 A
MARKING
DIAGRAMS
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
4
Drain
Drain ? to ? Gate Voltage (R GS = 10 M W )
Gate ? to ? Source Voltage, Continuous
? Non ? Repetitive (t p v 10 ms)
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Single Pulse (t p v 10 m s)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Operating and Storage Temperature Range
V DGR
V GS
V GS
I D
I D
I DM
P D
T J , T stg
60
" 15
" 20
12
10
45
48
0.32
2.1
1.5
? 55 to
+175
Vdc
Vdc
Adc
Apk
W
W/ ° C
W
W
° C
1 2
3
4
4
DPAK
CASE 369C
STYLE 2
DPAK ? 3
CASE 369D
STYLE 2
1
Gate
2
Drain
4
Drain
3
Source
3
Single Pulse Drain ? to ? Source Avalanche E AS 61 mJ
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc, L = 1.0 mH
I L(pk) = 11 A, V DS = 60 Vdc)
Thermal Resistance, ? Junction ? to ? Case R q JC 3.13 ° C/W
? Junction ? to ? Ambient (Note 1) R q JA 71.4
? Junction ? to ? Ambient (Note 2) R q JA 100
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size,
(Cu Area 1.127 in 2 ).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in 2 ).
1
2
1 2 3
Gate Drain Source
55L104 = Device Code
Y = Year
WW = Work Week
G = Pb ? Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 8
1
Publication Order Number:
NTD3055L104/D
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相关代理商/技术参数
NTD3055L104/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 12 Amps, 60 Volts, Logic Level
NTD3055L104-001 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104-1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA
NTD3055L104-1G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104G 制造商:ON Semiconductor 功能描述:MOSFET
NTD3055L104T4 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104T4G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube